Employing low-temperature barriers to achieve strain-relaxed and high-performance GaN-based LEDs

被引：11

作者：

Lin, Zhiting ^{[1
,2
]}

Wang, Haiyan ^{[1
,2
]}

Wang, Wenliang ^{[1
,2
]}

Lin, Yunhao ^{[1
,2
]}

Yang, Meijuan ^{[1
,2
]}

Chen, Shuqi ^{[1
,2
]}

Li, Guoqiang ^{[1
,2
,3
]}

机构：

[1] S China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China

[2] S China Univ Technol, Engn Res Ctr Solid State Lighting & Its Informat, Guangzhou 510640, Peoples R China

[3] S China Univ Technol, Sch Mat Sci & Engn, Dept Elect Mat, Guangzhou 510640, Peoples R China

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 11期

基金：

中国国家自然科学基金;

关键词：

MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; III-NITRIDES; GROWTH; RELAXATION; DEPOSITION; STRESS; EFFICIENCY; SUBSTRATE; FILMS;

D O I：

10.1364/OE.24.011885

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The epitaxial structure design of low-temperature barriers has been adopted to promote strain relaxation in multiple quantum well (MQWs) and achieve high-efficient GaN-based light-emitting diodes (LEDs). With these barriers, the relaxation value of wells increases from 0 to 4.59%. The strain-relaxed mechanism of low-temperature barriers is also discussed. The LED chip with the barriers grown at the TMIn flow of 75 sccm and the growth temperature of 830 degrees C has an optimal strain relaxation value of 1.53% in wells, and exhibits the largest light output power of 63.83 mW at the injection current of 65 mA, which is higher than that of conventional LED (51.89 mW) by 23%. In-depth studies reveal that the optimal low-temperature barriers remarkably promote the strain relaxation in wells without forming large density of crystalline defects. This achievement of high-efficiency LEDs sheds light on the future solid-state lighting applications. (C)2016 Optical Society of America

引用

页码：1885 / 1896

页数：12

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