Estimating the Junction Temperature of InGaN and AlGaInP Light-Emitting Diodes

被引：7

作者：

Lee, Ya-Ju ^{[1
]}

Lee, Chia-Jung ^{[1
]}

Chen, Chih-Hao ^{[1
]}

机构：

[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei 116, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 04期

关键词：

GAN-BASED LEDS; HIGH-POWER; DEGRADATION; INTENSITY;

D O I：

10.1143/JJAP.50.04DG18

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The junction temperature of light-emitting diodes (LEDs) directly and significantly affects LEDs performances. Thus, accurate measurement and precise estimation of LEDs junction temperature become extremely important. In this study, we analyze the physical foundation of temperature-dependent electrical characteristics and develop a new scheme to directly express the dependence of junction temperature on injected current for InGaN and AlGaInP LEDs. From a more general viewpoint, our scheme for the estimation of junction temperature is primarily based on the LEDs external properties, and therefore can be applied to other kinds of III-V compound-based semiconductor LEDs. (C) 2011 The Japan Society of Applied Physics

引用

页数：5

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