Spin relaxation of electrons and holes in zinc-blende semiconductors

被引：41
作者：
Yu, ZG
Krishnamurthy, S
van Schilfgaarde, M
Newman, N
机构：
[1] SRI Int, Menlo Pk, CA 94025 USA
[2] Arizona State Univ, Tempe, AZ 85287 USA
来源：
PHYSICAL REVIEW B | 2005年 / 71卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.71.245312
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We develop a procedure to calculate spin relaxation times of electrons and holes in semiconductors using full band structures. The spin-orbit (SO) interaction is included in the unperturbed Hamiltonian. With the use of spin projection operators, we calculate electron and hole spin relaxation from both Elliott-Yafet and D'yakonov-Perel' mechanisms, and quantitatively explain measurements of GaAs. The predicted relaxation times of GaN are longer for electrons, but shorter for holes. We find that the valence band SO splitting at the zone center is not a good indicator of SO coupling for electrons.
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页数：5
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