Validation of a fast and accurate 3D mask model for SRAF printability analysis at 32nm node

被引：6

作者：

Liu, Peng ^{[1
]}

Zuniga, Christian ^{[1
]}

Ma, Zhongtuan ^{[2
]}

Feng, Hanying ^{[1
]}

机构：

[1] Brion Technologies Inc, 4211 Burton Dr, Santa Clara, CA 95054 USA

[2] Brion Technol Co Ltd, Shenzhen 518057, Peoples R China

来源：

PHOTOMASK TECHNOLOGY 2007, PTS 1-3 | 2007年 / 6730卷

关键词：

thick mask; SRAF;

D O I：

10.1117/12.746704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The accuracy of a fast 3D thick mask model is evaluated for 6% AttPSM having sub-resolution assist features (SRAF). The main features and SRAFs are designed to print 40nm lines or spaces on wafer (k(1)similar to 0.28) through pitch from 100nm to 500nm. The resulting optimum SRAF sizes vary from 10nm to 48nm depending on the main feature pitch, mask tone and illuminator shape. The model accuracy is evaluated on both main feature CDs and SRAF side lobe intensities by comparing with a rigorous model. The fast 31) model shows improvements in both areas over thin mask model, particularly in SRAF printability prediction.

引用

页数：8

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OPTICAL MICROLITHOGRAPHY XX, PTS 1-3, 2007, 6520

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