Measuring disorder in graphene with the G and D bands

被引：241

作者：

Jorio, Ado ^{[1
]}

Martins Ferreira, Erlon H. ^{[2
]}

Moutinho, Marcus V. O. ^{[3
]}

Stavale, Fernando ^{[2
]}

Achete, Carlos A. ^{[2
,4
]}

Capaz, Rodrigo B. ^{[2
,3
]}

机构：

[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

[2] Inst Nacl Metrol Normalizacao & Qualidade Ind, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ, Brazil

[3] Univ Fed Rio de Janeiro, Inst Fis, BR-21941972 Rio De Janeiro, Brazil

[4] Univ Fed Rio de Janeiro, PEMM, BR-21945970 Rio De Janeiro, Brazil

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 11-12期

关键词：

D-band; disorder; G-band; graphene; ion bombardment; Raman spectroscopy; RAMAN-SPECTROSCOPY; GRAPHITE;

D O I：

10.1002/pssb.201000247

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Here we analyse the evolution of the disorder induced D-band (similar to 1350cm(-1)) and of the first-order allowed G-band (similar to 1584 cm(-1)) in the Raman spectra of ion bombarded graphene. By increasing the bombardment time, we increase the disorder and, consequently, decrease the average distance (L(D)) between defects. We describe how the intensity, full width at half maximum (FWHM) and integrated area vary for the D and G bands as a function of LD. Finally, we compare the evolution of the intensity ratio I(D)/I(G) and of the integrated area ratio A(D)/A(G) between the D and G bands as a method for quantifying disorder in graphene. For practical use and inter-laboratorial comparison, the authors advise using the intensity ratio for a more suitable measure for analysing defect density. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2980 / 2982

页数：3

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