Structure and defects-related optical properties of highly (002)-oriented zinc oxide thin films

被引:17
作者
Anjum, A. [1 ]
Ahmed, R. [1 ]
Umar, Z. A. [1 ]
Azzam, S. [1 ]
Hussain, T. [1 ]
Sarwar, M. N. [2 ]
Baig, M. A. [1 ]
机构
[1] Natl Ctr Phys, Quaid i Azam Univ Campus, Islamabad 45320, Pakistan
[2] Ibn E Sina Inst Technol, Sect H-11, Islamabad 44000, Pakistan
关键词
ZnO thin Films; Optical properties; Deep level emissions; Hexagonal wurtzite structure; PLD; ZNO NANOSTRUCTURES; VISIBLE LUMINESCENCE; GAS SENSOR; TEMPERATURE; PHOTOLUMINESCENCE; PHOTOCATALYSIS; EXCITON; GROWTH;
D O I
10.1016/j.physb.2022.414195
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report on the highly (002)-oriented ZnO thin films deposited on glass substrates at different substrate temperatures using the recently developed pulsed laser deposition (PLD) facility at our institution. Effects of the substrate temperature on the structural, compositional, morphological, and optical properties of the ZnO thin films are studied. The XRD studies revealed the deposition of high-quality ZnO thin films with preferred hex-agonal wurtzite structure along the (002) plane above 200 C substrate temperatures. An increase in the crys-tallite size estimated using the Scherrer formula from 9.58 nm to 13.25 nm of the deposited thin films reflects the enhancement of the crystallinity with the increasing substrate temperature. Scanning electron microscope (SEM) micrographs revealed a smooth surface morphology with small grains for the thin film deposited at room tem-perature. The thin films deposited at high substrate temperatures showed agglomeration of nanoparticles resulting in nano rod-like structures. The optical band gap energy was found to be increased with an increase in the crystallinity of the thin films. In the photoluminescence (PL) spectra; near band edge (NBE) emissions were observed in all of the deposited thin films. The deep-level emissions of ZnO thin films were found to be highly dependent on the substrate temperature during film deposition. The thin films grown at 500 C showed the visible emission in blue, green, and yellow-orange regions, which corresponded to zinc vacancy (VZn), oxygen vacancy (VO), and oxygen interstitial (Oi) defect levels, respectively. These crystal defects in the deposited ZnO thin films are responsible for the deep level emission linked to the visible emission.
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页数:9
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