Reuse-Distance-Aware Write-Intensity Prediction of Dataless Entries for Energy-Efficient Hybrid Caches

被引:14
作者
Agarwal, Sukarn [1 ]
Kapoor, Hemangee K. [1 ]
机构
[1] IIT Guwahati, Dept Comp Sci & Engn, Gauhati 781039, India
关键词
Cache memory; dataless entries; hybrid cache; nonvolatile memories (NVMs); private blocks; reuse distance; spin-transfer torque random-access memory (STT-RAM); write-intensity (WI) prediction; RANDOM-ACCESS MEMORY; PERFORMANCE;
D O I
10.1109/TVLSI.2018.2836156
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Emerging nonvolatile memory technologies act as a prominent choice for the larger on-chip caches on account of high density, good scalability, and low static power consumption. However, costly write operations reduce their possibility as a successor of SRAM. To mitigate this problem, a spin-transfer torque random-access memory (STT-RAM)-SRAM hybrid cache architecture is proposed. In such cache architectures, allocation of a write-intensive block is the key challenge for energy efficiency. This paper presents a data allocation policy that reduces the number of writes and energy consumption of the STT-RAM region in the last-level cache by considering the existence of private blocks. Dataless entries are allocated in STT region for such private blocks, and actual data is written only when the block is written back from L1. Heavily written blocks are subsequently migrated to SRAM region. We also present a predictor that helps to redirect the write backs from L1 of dataless entries directly to SRAM region, depending on the predicted reuse-distance-aware write intensity. Experimental evaluation shows that this technique reduces the energy consumption by 34.3% (19.6%) and 23.3% (14.1%), respectively, over two existing techniques in the case of dual (quad) core system.
引用
收藏
页码:1881 / 1894
页数:14
相关论文
共 31 条
[1]   ReAct: A System for Recommending Actions for Rapid Resolution of IT Service Incidents [J].
Aggarwal, Vishalaksh ;
Agarwal, Shivali ;
Dasgupta, Gaargi B. ;
Sridhara, Giriprasad ;
Vijay, E. .
PROCEEDINGS 2016 IEEE INTERNATIONAL CONFERENCE ON SERVICES COMPUTING (SCC 2016), 2016, :1-8
[2]  
Ahn J, 2014, INT S HIGH PERF COMP, P25, DOI 10.1109/HPCA.2014.6835944
[3]  
Ahn J, 2013, I SYMPOS LOW POWER E, P223, DOI 10.1109/ISLPED.2013.6629298
[4]   Resistive Random Access Memory (ReRAM) Based on Metal Oxides [J].
Akinaga, Hiroyuki ;
Shima, Hisashi .
PROCEEDINGS OF THE IEEE, 2010, 98 (12) :2237-2251
[5]  
Albericio Jorge, 2013, 2013 46th Annual IEEE/ACM International Symposium on Microarchitecture (MICRO). Proceedings, P310, DOI 10.1145/2540708.2540735
[6]   Energy Efficient Last Level Caches via Last Read/Write Prediction [J].
Alves, Marco A. Z. ;
Villavieja, Carlos ;
Diener, Matthias ;
Navaux, Philippe O. A. .
2013 25TH INTERNATIONAL SYMPOSIUM ON COMPUTER ARCHITECTURE AND HIGH PERFORMANCE COMPUTING (SBAC-PAD), 2013, :73-80
[7]  
[Anonymous], TR81108 PRINC U DEP
[8]   Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) [J].
Apalkov, Dmytro ;
Khvalkovskiy, Alexey ;
Watts, Steven ;
Nikitin, Vladimir ;
Tang, Xueti ;
Lottis, Daniel ;
Moon, Kiseok ;
Luo, Xiao ;
Chen, Eugene ;
Ong, Adrian ;
Driskill-Smith, Alexander ;
Krounbi, Mohamad .
ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS, 2013, 9 (02)
[9]  
Binkert Nathan, 2011, Computer Architecture News, V39, P1, DOI 10.1145/2024716.2024718
[10]  
Carter J.L., 1977, Proceedings of the Ninth Annual ACM Symposium on Theory of Computing, STOC'77, page, P106, DOI DOI 10.1145/800105.803400