Memory effect in a system of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs

被引：10

作者：

Wang, W. Z. ^{[1
]}

Deng, J. J. ^{[1
]}

Lu, J. ^{[1
]}

Sun, B. Q. ^{[1
]}

Zhao, J. H. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 20期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2814037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs matrices are fabricated by in situ postgrowth annealing diluted magnetic semiconductor (Ga,Mn)As films with Mn concentration ranging from 2.6% to 8% at 650 degrees C. Magnetization measurements show that memory effect and slow magnetic relaxation, the typical characteristics of the spin-glass-like phase, occur below the blocking temperature of 45 K in samples with high Mn concentration, while for samples with low Mn concentration, ferromagnetic order remains up to 360 K. The behavior of low-temperature spin dynamics can be explained by the hierarchical model. (c) 2007 American Institute of Physics.

引用

页数：3

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