Memory effect in a system of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs

被引：10
|
作者：
Wang, W. Z. [1 ]
Deng, J. J. [1 ]
Lu, J. [1 ]
Sun, B. Q. [1 ]
Zhao, J. H. [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 20期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2814037
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs matrices are fabricated by in situ postgrowth annealing diluted magnetic semiconductor (Ga,Mn)As films with Mn concentration ranging from 2.6% to 8% at 650 degrees C. Magnetization measurements show that memory effect and slow magnetic relaxation, the typical characteristics of the spin-glass-like phase, occur below the blocking temperature of 45 K in samples with high Mn concentration, while for samples with low Mn concentration, ferromagnetic order remains up to 360 K. The behavior of low-temperature spin dynamics can be explained by the hierarchical model. (c) 2007 American Institute of Physics.
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页数：3
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