Near-field NanoThermoMechanical memory

被引:26
作者
Elzouka, Mahmoud [1 ]
Ndao, Sidy [1 ]
机构
[1] Univ Nebraska Lincoln, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
关键词
HIGH-TEMPERATURE ELECTRONICS;
D O I
10.1063/1.4904828
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, we introduce the concept of NanoThermoMechanical Memory. Unlike electronic memory, a NanoThermoMechanical memory device uses heat instead of electricity to record, store, and recover data. Memory function is achieved through the coupling of near-field thermal radiation and thermal expansion resulting in negative differential thermal resistance and thermal latching. Here, we demonstrate theoretically via numerical modeling the concept of near-field thermal radiation enabled negative differential thermal resistance that achieves bistable states. Design and implementation of a practical silicon based NanoThermoMechanical memory device are proposed along with a study of its dynamic response under write/read cycles. With more than 50% of the world's energy losses being in the form of heat along with the ever increasing need to develop computer technologies which can operate in harsh environments (e.g., very high temperatures), NanoThermoMechanical memory and logic devices may hold the answer. (C) 2014 AIP Publishing LLC.
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页数:4
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