Enhanced Absorption Due to Formation of Quasi-Bound States in Type-II Coupled Quantum Rings

被引：0
作者：
Hsieh, Chi-Ti [1 ]
Lin, Shih-Yen [1 ,2 ]
Chang, Shu-Wei [1 ,3 ]
机构：
[1] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2018年 / 24卷 / 02期
关键词：
Absorption; type-II quantum ring; quasi-bound state; tunneling; BAND PARAMETERS; SUPERLATTICE; POTENTIALS; LAYER; DOTS; GASB;
D O I：
10.1109/JSTQE.2017.2736438
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The absorption of type-II nanostructures is often weaker than type-I counterpart due to spatially indirect optical transitions. This phenomenon limits the application of type-II nanostructures in photon detections. In this paper, we show that with proper arrangements of conduction barriers, the formation of quasi-bound states can significantly boost up the absorption of type-II coupled quantum rings. Meanwhile, the rapid tunneling of electrons in these leaky states should make the corresponding external quantum efficiency comparable to that of single (uncoupled) rings. These featuresmay improve the performance of photon detectors based on type-II semiconductor nanostructures.
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页数：7
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