Standing-Wave-Assisted Creation of Nanopillar Arrays with Vertically Integrated Nanogaps for SERS-Active Substrates

被引:48
作者
Jeon, Tae Yoon [1 ]
Park, Sung-Gyu [2 ]
Kim, Dong-Ho [2 ]
Kim, Shin-Hyun [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Program BK21, Dept Chem & Biomol Engn, Daejeon 305701, South Korea
[2] Korea Inst Mat Sci, Adv Funct Thin Films Dept, Chang Won 641831, Gyeongnam, South Korea
基金
新加坡国家研究基金会;
关键词
sensors; Raman scattering; hierarchical structures; standing waves; interference lithography; nanogaps; ENHANCED RAMAN-SCATTERING; LITHOGRAPHY; NANOSTRUCTURES; FABRICATION; MOLECULE; NANOPARTICLES; SURFACES; DIMERS; GAP;
D O I
10.1002/adfm.201501274
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An optical method is used to create multi-dimensional metal structures with three distinct periodicities for surface-enhanced Raman scattering (SERS). Periodic arrays of nanopillars are formed by phase-shift interference lithography on sub-micrometer length scales. With the help of a standing wave, each nanopillar is made to be a disk-stacking structure consisting of a series of 20-nm-thick metal nanogaps; the nanopillars consequently resemble a pagoda. The vertically integrated metal nanogaps of the metal-deposited pagoda-like nanopillars enable strong localization of an electromagnetic field and effective enhancement of Raman signals for molecules adsorbed on the metal surface. Moreover, the nanopillars are arranged in a regular lattice, which results in a low spatial variation of the SERS intensity and provides high reproducibility in measurements. Arrays of the nanopillars can be further micropatterned to have a periodicity ranging from tens of micrometers to a millimeter by subsequently employing photo-lithography. The nanopillar arrays promote the wetting of sample fluids, which enables the selective confinement of fluids on the array regions of the micropatterns without spreading. Consequently, numerous fluid samples can be separately deposited, enabling SERS-based analysis of multiple samples using a single substrate.
引用
收藏
页码:4681 / 4688
页数:8
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