Study on valence offsets at InxGa1-xAs/InxAl1-xAs heterojunction

被引：6
|
作者：
Zheng, JC [1 ]
Zheng, YM [1 ]
Wang, RZ [1 ]
机构：
[1] CCAST,WORLD LAB,BEIJING 100080,PEOPLES R CHINA
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 02期
关键词：
D O I：
10.1088/0953-8984/9/2/012
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, the valence band offsets Delta E(v)(x) as a function of the alloy concentration x of the heterojunctions InxGa1-xAs/InxAl1-xAs are studied, using the average-bond-energy theory in conjunction with a cluster expansion method. It is shown that the variation in Delta E(v)(x) is nearly linear and the calculation results are in very good agreement with relevant experimental data.
引用
收藏
页码：439 / 445
页数：7
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