Transforming Polymorphs via Meniscus-Assisted Solution-Shearing Conjugated Polymers for Organic Field-Effect Transistors

被引:35
作者
Chen, Shuwen [1 ]
Zhu, Shuyin [1 ]
Lin, Zhiqun [2 ]
Peng, Juan [1 ]
机构
[1] Fudan Univ, Dept Macromol Sci, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
基金
上海市自然科学基金; 中国国家自然科学基金;
关键词
polymorph transformation; polythiophene; meniscus-assisted solution shearing; organic field-effect transistors; crystal orientation; charge transport; HIGH-PERFORMANCE; CHARGE-TRANSPORT; ALIGNMENT; TRANSITION; REGIOREGULARITY; BACKBONES; BEHAVIOR; ORDER; FILMS;
D O I
10.1021/acsnano.2c04049
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The ability to tune polymorphs of conjugated polymers affords a robust platform for investigating the processing-structure-property relationship. However, simple and generalizable routes to polymorphs have yet to be realized. Herein, we report a viable meniscus-assisted solution-shearing (MASS) strategy to effectively modulate polymorphs (i.e., polymorphs I and II) of poly(3-butylthiophene) (P3BT) and scrutinize the correlation between the two different polymorphs and charge transport characteristics. Specifically, polymorph II exists solely in drop-cast P3BT films. Intriguingly, confined shearing of P3BT renders efficient transformation of polymorph II to I. The kinetics of polymorph transformation associated with the changes in molecular packing and thus photophysical properties are elucidated. The resulting organic field-effect transistors reveal a strong correlation of device performance to attained polymorphs and crystal orientations of P3BT. Such polymorph transformation via the convenient MASS technique can be readily extended to other conjugated polymers of interest. This study highlights the robustness of MASS in regulating polymorphs of conjugated polymers to interrogate their interdependence of processing, structure, and property for a wide range of optoelectronic applications.
引用
收藏
页码:11194 / 11203
页数:10
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