High-temperature electrical conductivity of codoped ZnS and CdSe

被引:1
作者
Lott, K
Volovujeva, O
Nirk, T
Türn, L
Öpik, A
Gorohova, E
机构
[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia
[2] SI Vavilov State Opt Inst, St Petersburg, Russia
关键词
zinc sulphide; cadmium selenide; electrical conductivity; defects;
D O I
10.1016/j.physb.2003.09.078
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Systems of binary compounds containing two types of foreign atoms are complicated. In this work we are interested in high-temperature electrical conductivity (HTEC) behaviour of ZnS and CdSe crystals codoped with two impurities (Cu and Cl or In). We tried to find common behaviour and common features in HTEC isobars of these systems. We were also interested in the temperature regions of forming associates between these dopants. At a temperature T=500degreesC, thermodynamic equilibrium between defects in ZnS:Cu:Cl is achieved. For HTEC isobars, three temperature regions with different dominating defects for ZnS:Cu:Cl, CdSe:Cu:In and CdSe:Cu:Cl can be observed. The low-temperature region characterizes the reactions between associates of dopants and single defects with an activation energy DeltaE=1.5 eV for ZnS:Cu:Cl and DeltaE=1.05 eV for CdSe:Cu:In. In the HTEC isobar region, the donor action of both dopants is observed with close to zero or even negative activation energy of HTEC isobars. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:263 / 266
页数:4
相关论文
共 11 条
[1]   Effect and comparison of co-doping of Ag, Ag plus In, and Ag+Clin ZnS:N/GaAs layers prepared by vapor-phase epitaxy [J].
Kishimoto, S ;
Hasegawa, T ;
Kinto, H ;
Matsumoto, O ;
Iida, S .
JOURNAL OF CRYSTAL GROWTH, 2000, 214 :556-561
[2]  
Kroger F.A, 1974, The Chemistry of Imperfect Crystals, V2
[3]   High temperature electrical conductivity in donor-doped II-VI compounds [J].
Lott, K ;
Volobujeva, O ;
Öpik, A ;
Nirk, T ;
Türn, L ;
Noges, M .
10TH INTERNATIONAL CONFERENCE ON SHALLOW LEVEL CENTERS IN SEMICONDUCTORS (SLCS-10), PROCEEDINGS, 2003, :618-621
[4]   High temperature electrical conductivity of undoped ZnS [J].
Lott, K ;
Türn, L ;
Volobujeva, O ;
Leskelä, M .
PHYSICA B-CONDENSED MATTER, 2001, 308 :932-934
[5]  
Lott K, 2002, PHYS STATUS SOLIDI B, V229, P361, DOI 10.1002/1521-3951(200201)229:1<361::AID-PSSB361>3.0.CO
[6]  
2-W
[7]   High temperature electrical conductivity in the Cu solubility limit range in ZnS:Cu [J].
Lott, K ;
Raukas, M ;
Vishnjakov, A ;
Grebennik, A .
JOURNAL OF CRYSTAL GROWTH, 1999, 197 (03) :489-492
[8]   High temperature electrical conductivity in the phase transition region [J].
Lott, K ;
Nirk, T .
JOURNAL OF CRYSTAL GROWTH, 1999, 197 (03) :485-488
[9]  
LOTT K, 2003, CRYST ENG, V5, P164
[10]   ELECTRON-TRANSPORT IN ZNS [J].
RUDA, HE ;
LAI, B .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) :1714-1719