Hole subband non-parabolicities in strained Si/Si1-xGex quantum wells

被引：4

作者：

Hionis, G ^{[1
]}

Triberis, GP ^{[1
]}

机构：

[1] Univ Athens, Dept Phys, Solid State Sect, Athens 15784, Greece

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 24卷 / 06期

关键词：

D O I：

10.1006/spmi.1998.0602

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the hole subband non-parabolicities in undoped pseudomorphic Si/Si1-xGex quantum wells, strained in the growth direction [100]. We solve exactly the multiband effective mass equation that describes the heavy, light and split-off hole valence bands. The symmetries of the Luttinger-Kohn Hamiltonian of the system are used to decouple the degenerate subbands. We calculate the in-plane dispersion relations, investigate the importance of the inclusion of the split-off hole valence band in the Hamiltonian and comment on the resulted non-parabolicities. Resonance states are also obtained. (C) 1998 Academic Press.

引用

页码：399 / 407

页数：9

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