The adsorption of potassium on MgO thin films supported on Ru(001) has been studied using TDS and XPS. The interaction of K atoms with defect sites in MgO films at low K coverages is evidenced by K desorption at a constant temperature of 335 K and a K 2p(3/2) binding energy (BE) of 293.5 eV within theta(K)less than or equal to 1 ML. Upon oxygen adsorption on K submonolayer-covered MgO, a molecular oxygen species desorbing at 390 K is characterized with an O 1s BE of 533.7 eV, demonstrated further in isotope exchange experiments. This molecular oxygen species gradually diminishes with increasing theta(K). The formation of K2O at theta(K)greater than or equal to 1 ML is demonstrated by the O 1s peak at 528.0 eV, together with its thermal desorption at 600 K. A strongly bonded K=O complex evidenced by coincident K and O-2 desorption at 800-1000 K exists at all theta(K)s studied. (C) 1998 Elsevier Science B.V. All rights reserved.
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
Qiu, X. Y.
Wang, R. X.
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
Wang, R. X.
Li, G. Q.
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
Li, G. Q.
Zhang, T.
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
Zhang, T.
Li, L. T.
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
Li, L. T.
Wei, M. L.
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
Wei, M. L.
Meng, X. S.
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
Meng, X. S.
Ji, H.
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Univ Elect Sci & Technol China, Sch Energy Sci & Engn, Chengdu 610054, Sichuan, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
Ji, H.
Zhang, Z.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
Zhang, Z.
Chan, C. H.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
Chan, C. H.
Dai, J. Y.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaSouthwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China