Meyer-Neldel-behavior of deep level parameters in heterojunctions to Cu(In,Ga)(S,Se)(2)

Admittance spectroscopy was measured on Cu(In, Ga)(S,Se)(2) thin film and single crystal heterojunctions. The emission rates of defects for various near-stoichiometric compositions follow a Meyer-Neldel rule, showing increasing attempt-to-escape frequencies with increasing defect depth. Defects in highly (In,Ga)-rich material showed lower attempt-to-escape frequencies and follow a separate Meyer-Neldel relation. Repetitive air annealing of a CulnSe(2) heterojunction revealed a shift of the depth and capture cross section of an observed defect. (C) 1996 American Institute of Physics.