Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors

被引：4
作者：
Patrashin, Mikhail [1 ]
Akahane, Kouichi [1 ]
Sekine, Norihiko [1 ]
Hosako, Iwao [1 ]
机构：
[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukuikitamachi, Koganei, Tokyo 1848795, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2017年 / 477卷
关键词：
Molecular beam epitaxy; Superlattices; Antimonides; Heterojunction semiconducting devices; Characterization; X-ray diffraction; SEMICONDUCTORS; GASB; INAS;
D O I：
10.1016/j.jcrysgro.2017.02.030
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on the growth and characterization of strained-layer InAs/Ga1-xInxSb superlattices for long-wavelength photodetectors. The thickness and alloy composition x < 0.4 of the layers were designed to produce narrow superlattice energy gaps of < 50 meV for optical absorption in the terahertz spectral range. The structures were grown on GaSb (100) substrates by solid-source molecular beam epitaxy. The structure and surface quality were analyzed by using X-ray diffraction, scanning transmission electron microscopy, energy-dispersive spectroscopy, and Rutherford backscattering spectroscopy. Transmittance and reflectance spectra were measured to evaluate the optical properties. The characterization results demonstrated the feasibility of the pseudomorphic growth of strained InAs/GaInSb superlattices and their promising optical properties for long-wavelength photodetectors. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：86 / 90
页数：5
相关论文
共 11 条
  • [1] INAS-GASB SUPERLATTICES-SYNTHESIZED SEMICONDUCTORS AND SEMIMETALS
    ESAKI, L
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 227 - 240
  • [2] SURFACE PROCESSES CONTROLLING GROWTH OF GAXIN1-XAS AND GAXIN1-XP ALLOY-FILMS BY MBE
    FOXON, CT
    JOYCE, BA
    [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) : 75 - 83
  • [3] The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures:: a selective review
    Kroemer, H
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4) : 196 - 203
  • [4] STRAIN EFFECTS IN INGASB/ALGASB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    KURAMOCHI, E
    TAKANASHI, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) : 5706 - 5711
  • [5] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS
    MATTHEWS, JW
    BLAKESLEE, AE
    [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 118 - 125
  • [6] Critical thickness of MBE-grown Ga1-xInxSb (x&lt;0.2) on GaSb
    Nilsen, T. A.
    Breivik, M.
    Selvig, E.
    Fimland, B. O.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1688 - 1691
  • [7] Type-II InAs/GaInSb superlattices for terahertz range photodetectors
    Patrashin, Mikhail
    Hosako, Iwao
    Akahane, Kouichi
    [J]. MILLIMETRE WAVE AND TERAHERTZ SENSORS AND TECHNOLOGY IV, 2011, 8188
  • [8] Third-generation infrared photodetector arrays
    Rogalski, A.
    Antoszewski, J.
    Faraone, L.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)
  • [9] PROPOSAL FOR STRAINED TYPE-II SUPERLATTICE INFRARED DETECTORS
    SMITH, DL
    MAILHIOT, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2545 - 2548
  • [10] Interband cascade lasers
    Vurgaftman, I.
    Weih, R.
    Kamp, M.
    Meyer, J. R.
    Canedy, C. L.
    Kim, C. S.
    Kim, M.
    Bewley, W. W.
    Merritt, C. D.
    Abell, J.
    Hoefling, S.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (12)
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