Preparation of HfO2 Thin Film Through Self-Assembled Monolayers on Si Substrate

被引：0
|
作者：
Zheng Yu-Qin [1 ]
Tan Guo-Qiang [1 ]
Miao Hong-Yan [1 ]
He Zhong-Liang [1 ]
Xia Ao [1 ]
Bo Hai-Yang [1 ]
机构：
[1] Shaanxi Univ Sci & Technol, Key Lab Auxiliary Chem & Technol Chem Ind, Minist Educ, Xian 710021, Shaanxi, Peoples R China
来源：
CHINESE CERAMICS COMMUNICATIONS | 2010年 / 105-106卷
关键词：
Self-assembled monolayers; HfO(2) thin film; Silicon substrate; GROWTH;
D O I：
10.4028/www.scientific.net/AMR.105-106.255
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
HfO(2) thin film was successfully prepared on the silicon substrate by the Liquid Phase Deposition (LPD) and functionalized organic self-assembled monolayers (SAMs) method. Measurement of contact angle showed that SAMs surface characteristics changed from hydrophobic to hydrophilic after UV irradiation. Photographs of Metallographic Microscope showed that octadecyl trichlorosilane-self-assembled monolayers (OTS-SAMs) had an active effect on the deposition of HfO(2) thin film. XRD, SEM and AFM images indicated that the HfO(2) thin film with cubic crystal structure was smooth, uniform and dense. Its grain size was between 40-100 nm and the height of thin film varies between 20 and 100 nm.
引用
收藏
页码：255 / 258
页数：4
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