Measurement of the electron-hole pair creation energy in Al0.52In0.48P using X-ray radiation

被引：24

作者：

Butera, S. ^{[1
]}

Lioliou, G. ^{[1
]}

Krysa, A. B. ^{[2
]}

Barnett, A. M. ^{[1
]}

机构：

[1] Univ Sussex, Space Res Grp, Sch Engn & Informat, Brighton BN1 9QT, E Sussex, England

[2] Univ Sheffield, EPSRC Natl Ctr Technol 3 5, Mappin St, Sheffield S1 3JD, S Yorkshire, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2018年 / 879卷

关键词：

Al0.52In0.48P; Electron-hole pair creation energy; X-ray; Semiconductor; GALLIUM-ARSENIDE; SILICON-CARBIDE; DETECTORS; SPECTROSCOPY; SEMICONDUCTORS; DEPENDENCE; LASERS; GAINP; NM;

D O I：

10.1016/j.nima.2017.10.027

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The average energy consumed in the generation of an electron-hole pair (epsilon(ALInP)) in Al0.52In0.48P was experimentally measured across the temperature range -20 degrees C to 100 degrees C, using a custom AlInP X-ray-photodiode, an Fe-55 radioisotope X-ray source, and custom low-noise charge-sensitive preamplifier electronics. epsilon(ALInP) was found to linearly decrease with increasing temperature according to the equation epsilon(ALInP) =(-0.0033 eV/K +/- 0.0003 eV/K) T + (6.31 eV +/- 0.10 eV). At room temperature (20 degrees C), epsilon(ALInP) = 5.34 eV +/- 0.07 eV. (C) 2017 The Authors. Published by Elsevier B. V. This is an open access article under the CC BY license.

引用

页码：64 / 68

页数：5

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