Improved electrical properties of Pt/HfO2/Ge using in situ water vapor treatment and atomic layer deposition

被引：18

作者：

Park, In-Sung ^{[1
]}

Choi, Youngjae ^{[1
]}

Nichols, William T. ^{[1
]}

Ahn, Jinho ^{[1
]}

机构：

[1] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 10期

关键词：

KAPPA GATE DIELECTRICS; GE; GERMANIUM; CMOS; PASSIVATION; CAPACITORS; SURFACES; GE(100); GROWTH;

D O I：

10.1063/1.3562015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of water vapor treatment (WVT) on a Ge substrate were investigated in order to understand the improved electrical properties of Pt/HfO2/Ge metal-oxide-semiconductor (MOS) capacitors. The WVT and HfO2 deposition were performed in situ using an atomic layer deposition technique to avoid air exposure. As a result, the WVT on cleaned Ge substrates reduced the native oxide effectively and enhanced the initial growth of the HfO2 film. The improved interface qualities with WVT enhanced Ge-based device performance through a smoother capacitance-voltage curve, less increase in the inversion capacitance, and lower density of interface states. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562015]

引用

页数：3

共 16 条

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