Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits

被引：98

作者：

Dodd, P. E. ^{[1
]}

Schwank, J. R. ^{[1
]}

Shaneyfelt, M. R. ^{[1
]}

Felix, J. A. ^{[1
]}

Paillet, P. ^{[2
]}

Ferlet-Cavrois, V. ^{[2
]}

Baggio, J. ^{[2
]}

Reed, R. A. ^{[3
]}

Warren, K. M. ^{[3
]}

Weller, R. A. ^{[3
]}

Schrimpf, R. D. ^{[3
]}

Hash, G. L. ^{[1
]}

Dalton, S. M. ^{[1
]}

Hirose, K. ^{[4
]}

Saito, H. ^{[4
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] CEA, DIF, F-91680 Bruyeres Le Chatel, France

[3] Vanderbilt Univ, Nashville, TN 37064 USA

[4] Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期

关键词：

indirect ionization; integrated circuit reliability; nuclear reactions; radiation effects; radiation hardness assurance; single-event effects; single-event latchup; single-event upset; soft errors;

D O I：

10.1109/TNS.2007.909844

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and latchup cross sections measured using low versus high energy heavy ions. However, significant differences between low- and high-energy heavy ion test results are observed below the threshold LET for single-node direct ionization-induced upsets. The data suggest that secondary particles produced by nuclear interactions play a role in determining the SEU and SEL hardness of integrated circuits, especially at low LET. The role of nuclear interactions and implications for radiation hardness assurance and rate prediction are discussed.

引用

页码：2303 / 2311

页数：9

共 25 条

[1] SINGLE EVENT UPSET TESTING WITH RELATIVISTIC HEAVY-IONS [J].