A curvature compensated CMOS bandgap voltage reference for high precision applications

被引：5
作者：
Chen, Jianghua [1 ]
Ni, Xuewen [1 ]
Mo, Bangxian [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
ASICON 2007: 2007 7TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
CMOS; analog integrated circuits; bandgap reference; low temperature coefficient; high order curvature compensation;
D O I：
10.1109/ICASIC.2007.4415679
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a high precision high order curvature compensated bandgap voltage reference in a 0.5-mu m 2P3M n-well mixed signal CMOS technology. This newly proposed bandgap voltage reference utilizes a Buck's voltage transfer cell and a temperature independent current, to provide a high order compensation of the V-BE. Cascode structures are also introduced in this bandgap voltage reference to improve the power supply rejection ratio (PSRR). This circuit achieves 5.6 ppm/degrees C of temperature coefficient with temperature ranging from -20 to 100 degrees C at 5V power supply. The variation in the output voltage of the bandgap voltage reference is 0.4mV when V-DD varies from 4V to 6V.
引用
收藏
页码：510 / 513
页数：4
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