Information-Theoretic Sneak-Path Mitigation in Memristor Crossbar Arrays

被引:46
作者
Cassuto, Yuval [1 ]
Kvatinsky, Shahar [1 ]
Yaakobi, Eitan [2 ]
机构
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Dept Comp Sci, IL-32000 Haifa, Israel
关键词
Codes for memories; sneak paths; constraint codes; memristors; resistive memories; crossbar arrays; Z channel; DATA-STORAGE; MEMORY;
D O I
10.1109/TIT.2016.2594798
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
In a memristor crossbar array, functioning as a memory array, a memristor is positioned on each row-column intersection, and its resistance, low or high, represents two logical states. The state of every memristor can be sensed by the current flowing through the memristor. In this paper, we study the sneak path problem in crossbar arrays, in which current can sneak through other cells, resulting in reading a wrong state of the memristor. Our main contributions are modeling the error channel induced by sneak paths, a new characterization of arrays free of sneak paths, and efficient methods to read the array cells while avoiding sneak paths. To each read method, we match a constraint on the array content that guarantees sneak-path free readout, determine the resulting capacity, and provide an efficient encoder that achieves the capacity.
引用
收藏
页码:4801 / 4813
页数:13
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