Textural and microstructural transformation of Cu damascene interconnects after annealing

被引:11
作者
Cho, JY
Lee, HJ
Kim, H
Szpunar, JA
机构
[1] McGill Univ, Dept Min Met & Mat Engn, Montreal, PQ H3A 2B2, Canada
[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
[3] Seoul Natl Univ, Res Inst Adv Mat, Seoul 151744, South Korea
关键词
Cu damascene interconnects; texture; microstructure; stress; grain boundary character distribution (GBCD); electron backscattered diffraction (EBSD);
D O I
10.1007/s11664-005-0058-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Influence of annealing on the textural and microstructural transformation of Cu interconnects having various line widths is investigated. Two types of annealing steps have been considered here: room temperature over 6 months and 200 degrees C for 10 min. The texture was determined by x-ray diffraction (XRD) of various cross-sectional profiles after electropolishing, and the surface, microstructure, and grain boundary character distribution (GBCD) of Cu interconnects were characterized using electron backscattered diffraction (EBSD) techniques. In order to analyze a relationship between the stress distribution and textural evolution in the samples, microstresses were calculated with decreasing line widths at 200 degrees C using finite element modeling (FEW In this investigation, it was found that the inhomogencity of stress distribution in Cu interconnects is an important factor, which is necessary for understand. ing textural transformation after annealing. A new interpretation of textural evolution in damascene interconnects lines after annealing is suggested, based on the state of stress and the growth mechanisms of Cu electrodeposits.
引用
收藏
页码:506 / 514
页数:9
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