Optoelectronic properties in quantum-confined germanium dots

被引：22

作者：

Scarselli, M. ^{[1
]}

Masala, S.

Castrucci, P.

De Crescenzi, M.

Gatto, E.

Venanzi, M.

Karmous, A.

Szkutnik, P. D.

Ronda, A.

Berbezier, I.

机构：

[1] Univ Roma Tor Vergata, Dipartimento Fis, Ctr NAST, I-00133 Rome, Italy

[2] Univ Roma Tor Vergata, Ctr NAST, Dipartimento Sci & Tecnol Chim, I-00133 Rome, Italy

[3] Fac Sci & Tech St Jerome, UMR 6137, CNRS, Lab Mat & Microelect Provence, F-13397 Marseille, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 14期

关键词：

D O I：

10.1063/1.2793179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photocurrent generation of nanometric Ge dots has been investigated by using electrochemical measurements. Photocurrent features have been ascribed, for large Ge dots, to Ge bulk direct electronic transitions at L and X points as evidenced by their close correspondence with the optical absorption coefficient. A blueshift of the photocurrent features has been detected by reducing the Ge dot size. These changes have been interpreted as due to quantum confinement effect. This result suggests that Ge dots could be applied in photovoltaic nanodevices and quantum dot based lasers. (C) 2007 American Institute of Physics.

引用

页数：3

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