Photoluminescence properties of KDP crystals under high power nanosecond laser irradiation

被引:1
|
作者
Luo, Yang [1 ,2 ]
Hu, Guohang [1 ]
Zhao, Yuanan [1 ]
Yang, Liujiang [1 ]
Shan, Yao [1 ,2 ]
Cao, Zhen [1 ,2 ]
Li, Dawei [1 ]
Liu, Xiaofeng [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
KDP; photoluminescence spectra; Raman; KH2PO4; CRYSTALS;
D O I
10.1117/12.2269706
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Combining high power laser irradiation and emission spectra measurement system, the photoluminescence properties of KDP crystal under high power laser irradiation were studied. Photoluminescence measurement was performed using 532 nm and 355 nm laser excitation at relatively high laser fluence but still under the laser induced damage threshold. Four emission peaks, centered at 559 nm, 586 nm, 609 nm and 621 nm, were observed while irradiated by high power laser at 532 nm. Five emission peaks, centered at 358 nm, 365 nm, 377 nm, 385 nm and 390 nm were observed under high power laser irradiation at 355 nm. Based on the analysis of wave number transformation, these peaks were attributed to the Raman scattering.
引用
收藏
页数:5
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