A phase noise analysis of CMOS colpitts oscillators

被引：1

作者：

Wang, XY ^{[1
]}

Andreani, P ^{[1
]}

机构：

[1] Tech Univ Denmark, Ctr Phys Elect, Orsted DTU, Lyngby, Denmark

来源：

22ND NORCHIP CONFERENCE, PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/NORCHP.2004.1423845

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a closed-form symbolic formula for phase-noise in the 1/f(2) region of Colpitts oscillator Calculations based on the formula are verified by simulations, showing accurate results under general assumptions. A new topology of differential Colpitts is proposed, coupling two single-ended Colpitts oscillators by a center tapped inductor instead of a common mode capacitor A comparison of phase noise between the differential Colpitts oscillator and the cross-coupled LC-tank oscillator is carried out, showing the LC-tank oscillator presents a better phase noise, working in the same condition. Several prototypes of both Colpitts and cross-coupled oscillators have been implemented in a 0.35 mu m CMOS process. The best performance of the LC-tank oscillators shows a phase noise of -139dB/Hz at 3MHz offset frequency from a 3GHz carrier with a 10mW power consumption, resulting in an excellent phase noise figure-of-merit (FoM) of 189dBC/Hz. Under the same working conditions, the FoM displayed by the differential Colpitts oscillators is between 4dB and 8dB lower than the FoM displayed by the cross-coupled LC-tank oscillators..

引用

页码：151 / 154

页数：4

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