The CuGaSe2(001) surface:: A (4 x 1) reconstruction

被引：8

作者：

Deniozou, T

Esser, N

Siebentritt, S

机构：

[1] Inst Analyt Sci, ISAS, D-12489 Berlin, Germany

[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

SURFACE SCIENCE | 2005年 / 579卷 / 01期

关键词：

auger electron spectroscopy (AES); low energy electron diffraction (LEED); ion bombardment; sputtering; step formation; surface reconstruction; surface structure; morphology;

D O I：

10.1016/j.susc.2005.02.001

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the formation of a stable (4 x 1) reconstruction of the chalcopyrite CuGaSe2(001) surface. Using Ar+ ion-bombardment and annealing of epitaxial CuGaSe2 films grown on GaAs(001) substrates it was possible to obtain flat, well-ordered surfaces showing a clear (4 x 1) reconstruction. The cleanliness and structure were analyzed in situ by AES and LEED. AES data suggest a slight Se-enrichment and Cu-depletion upon surface preparation. Our results demonstrate that (001) surfaces of the Cu-III-VI2(001) material can show stable, unfacetted surfaces. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：100 / 106

页数：7

共 23 条

[1] Microstructure and secondary phases in coevaporated CuInS2 films:: Dependence on growth temperature and chemical composition [J].