Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications

被引：0

作者：

Bakalova, S. ^{[1
]}

Szekeres, A. ^{[1
]}

Cziraki, A. ^{[2
]}

Grigorescu, S. ^{[3
]}

Socol, G. ^{[3
]}

Axente, E. ^{[3
]}

Mihailescu, I. N. ^{[3
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, Tzarigradsko Chaussee 72, BU-1784 Sofia, Bulgaria

[2] Eotvos Lorand Univ, Fac Solid State Phys, H-1117 Budapest, Hungary

[3] Natl Inst Lasers, Plasma & Rediat Phys, Bucharest RO-77125, Romania

来源：

ROMOPTO 2006: EIGHTH CONFERENCE ON OPTICS | 2007年 / 6785卷

关键词：

aluminium nitride; crystallographic structure; optical properties; polytypes;

D O I：

10.1117/12.756820

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structure and optical properties of AlN thin films synthesized at 800 degrees C by Pulsed Laser Deposition were studied in terms of ambient nitrogen pressure (10(-4)-10 pa) and post-deposition cooling rate (5-25 degrees C/min). X-ray diffraction patterns showed the films were polycrystalline with predominantly cubic phase and small-sized crystallites. The refractive index and oscillator energies values were also characteristic of the polycrystalline AlN with cubic structure.

引用

页数：5

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