Intense field effects on shallow donor impurities in graded quantum wells

被引：53

作者：

Sari, H ^{[1
]}

Kasapoglu, E

Sokmen, I

Balkan, N

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Dokuz Eylul Univ, Dept Phys, Izmir, Turkey

[3] Univ Essex, Dept Elect Syst Engn, Colchester CO4 3SQ, Essex, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 06期

关键词：

D O I：

10.1088/0268-1242/18/6/313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a variational method and within the effective mass approximation, we calculate the laser-field dependence of binding energy and the polarizability of shallow-donor impurities in graded quantum wells under an external static electric field. We have shown that, in the graded quantum well structures, not only the 'dressed' potential but also the direction of the external electric field parallel to the growth direction play very important roles in the determination of the binding energy and the polarizability of a hydrogenic impurity.

引用

页码：470 / 474

页数：5

共 36 条

[1] THEORETICAL CALCULATIONS OF SHALLOW DONOR IMPURITY STATES IN GAAS/GAALAS MULTIQUANTUM WELLS WITH MAGNETIC-FIELDS APPLIED PARALLEL TO THE LAYERS [J].