Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

被引：18

作者：

Liu, Lu ^{[1
]}

Kang, Tsung Sheng ^{[1
]}

Cullen, David A. ^{[2
]}

Zhou, Lin ^{[2
]}

Kim, Jinhyung ^{[3
]}

Chang, Chih-Yang ^{[4
]}

Douglas, Erica A. ^{[4
]}

Jang, Soohwan ^{[3
]}

Smith, David. J. ^{[2
]}

Pearton, S. J. ^{[4
]}

Johnson, Wayne J. ^{[5
]}

Ren, Fan ^{[1
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[3] Dankook Univ, Dept Chem Engn, Yongin 448701, South Korea

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[5] Nitronex Corp, Raleigh, NC 27606 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 03期

关键词：

CURRENT COLLAPSE; GAN; RELIABILITY; DEGRADATION;

D O I：

10.1116/1.3581078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of source field plates on AlGaN/GaN high electron mobility transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55 to 155 V and the critical voltage for off-state gate stress from 40 to 65 V, relative to devices without the field plate. Transmission electron microscopy was used to examine the degradation of the gate contacts. The presence of pits that appeared on both source and drain sides of the gate edges was attributed to the inverse piezoelectric effect. In addition, a thin oxide layer was observed between the Ni gate contact and the AlGaN layer, and both Ni and oxygen had diffused into the AlGaN layer. After step-stress cycling, additional threading dislocations were observed. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3581078]

引用

页数：5

共 21 条

[1] Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors [J].

Chang, Chih-Yang ;

Anderson, Travis ;

Hite, Jennifer ;

Lu, Liu ;

Lo, Chien-Fong ;

Chu, Byung-Hwan ;

Cheney, D. J. ;

Douglas, E. A. ;

Gila, B. P. ;

Ren, F. ;

Via, G. D. ;

Whiting, Patrick ;

Holzworth, R. ;

Jones, K. S. ;

Jang, Soohwan ;

Pearton, S. J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (05) :1044-1047

[2] TEM observation of crack- and pit-shaped defects in electrically degraded GaNHEMTs [J].

Chowdhury, Uttiya ;

Jimenez, Jose L. ;

Lee, Cathy ;

Beam, Edward ;

Saunier, Paul ;

Balistreri, Tony ;

Park, Seong-Yong ;

Lee, Taehun ;

Wang, J. ;

Kim, Moon J. ;

Joh, Jungwoo ;

del Alamo, Jesus A. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (10) :1098-1100

[3] GaN HEMT reliability [J].

del Alamo, J. A. ;

Joh, J. .

MICROELECTRONICS RELIABILITY, 2009, 49 (9-11) :1200-1206

[4] Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs [J].

Faqir, Mustapha ;

Verzellesi, Giovanni ;

Meneghesso, Gaudenzio ;

Zanoni, Enrico ;

Fantini, Fausto .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (07) :1592-1602

[5] Analysis of electric field distribution in GaAs metal-semiconductor field effect transistor with a field-modulating plate [J].

Hori, Y ;

Kuzuhara, M ;

Ando, Y ;

Mizuta, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) :3483-3487

[6]

Joh J., 2006, IEDM, P415, DOI DOI 10.1109/IEDM.2006.346799

[7] A simple current collapse measurement technique for GaN high-electron mobility transistors [J].

Joh, Jungwoo ;

del Alamo, Jesus A. ;

Jimenez, Jose .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (07) :665-667

[8] Field-plate engineering for HFETs [J].

Karmalkar, S ;

Shur, MS ;

Simin, G ;

Khan, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) :2534-2540

[9] Field-plated 0.25-μm gate-length AlGaN/GaN HEMTs with varying field-plate length [J].

Kumar, Vipan ;

Chen, Guang ;

Guo, Shiping ;

Adesida, Ilesanmi .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (06) :1477-1480

[10] Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors [J].

Makaram, Prashanth ;

Joh, Jungwoo ;

del Alamo, Jesus A. ;

Palacios, Tomas ;

Thompson, Carl V. .

APPLIED PHYSICS LETTERS, 2010, 96 (23)

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