Redistribution of mobile point defects in CdS crystals under ultrasound treatment

被引：6
作者：
Borkovska, LV
Baran, MP
Korsunska, NO
Markevich, IV
Singaevsky, OF
Sheinkman, MK
Torchynska, TV
机构：
[1] NASU, V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
[2] Inst Politecn Nacl, ESFM, Mexico City 07738, DF, Mexico
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 340卷
关键词：
point defects; ultrasound; dislocations;
D O I：
10.1016/j.physb.2003.09.077
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In CdS crystals, the influence of ultrasound (US) pulses on photocurrent, thermally stimulated current and edge emission spectra was observed. The effect was found to intensify with dislocation density. The analysis of obtained results showed that US treatment resulted in the decrease of shallow donor density in crystal bulk and its increase in near dislocation regions. This process of donor gettering by dislocations was shown to be one of the mechanisms of electron-beam-pumped CdS-based lasers degradation. (C) 2003 Elsevier B.V. All rights reserved.
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收藏
页码：258 / 262
页数：5
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