5-gb/s XOR optical gate based on cross-polarization modulation in semiconductor optical amplifiers

被引：68
作者：
Soto, H
Erasme, D
Guekos, G
机构：
[1] CICISE, Ensenada 22860, Baja California, Mexico
[2] Ecole Natl Super Telecommun, Dept Commun Electron, URA 0820, CNRS, F-75634 Paris 13, France
[3] Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 04期
关键词：
cross-polarization-modulation; logic gate; optical communication; optical signal processing; semiconductor optical amplifier; XOR;
D O I：
10.1109/68.917843
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we demonstrate a new design for a XOR optical gate operating in the GHz regime using the cross-polarization modulation effect in a semiconductor optical amplifier. Dynamic and optically controlled polarization rotation in the devices is used to control the output power of the device. Static extinction ratio of the order of 20 dB can be obtained, Bit rate doubling at rate of 1.2 and 2.5 Gb/s have been demonstrated.
引用
收藏
页码：335 / 337
页数：3
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