Optical second-harmonic probe for silicon millimeter-wave circuits

被引：21

作者：

Ohlhoff, C

Meyer, C

Lupke, G

Loffler, T

Pfeifer, T

Roskos, HG

Kurz, H

机构：

[1] Institute of Semiconductor Electronics II, Rheinisch-Westfälische Technische Hochschule

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.115910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric field-induced second-harmonic generation (EFISHG) is shown to be a very powerful method for contactless sampling of high-speed electrical signals on silicon millimeter-wave devices. We present picosecond resolution EFISHG measurements of 2 GHz sinusoidal signals on a photoconductive silicon-on-sapphire antenna. We further demonstrate the application of the EFISHG technique for spatial mapping of free-running microwave signals in silicon. (C) 1996 American Institute of Physics.

引用

收藏

页码：1699 / 1701

页数：3

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