Photo-Detectivity Modulation in Complementary Light-to-Frequency Conversion Circuits via Oxygen Vacancy Controlled Amorphous Indium-Gallium-Zinc Oxide Films

被引：4
作者：
Seo, Seung Gi [1 ]
Jeong, Jinheon [1 ]
Jin, Sung Hun [1 ]
机构：
[1] Incheon Natl Univ, Dept Elect Engn, Incheon 406772, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
Annealing; Inverters; Thin film transistors; Lighting; Photodetectors; Logic gates; Gold; SWNT; a-IGZO; thin film transistor; photosensitive inverters; light-to-frequency converter; TRANSISTORS;
D O I：
10.1109/LED.2021.3099066
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Herein, light-to-frequency conversion circuits (LFCs) using n-type amorphous indium-gallium-zinc oxide thin film transistors (a-IGZO TFTs) and p-type single-walled carbon nanotube (SWNT) TFTs are proposed as circuit level photodetector. The photoresponse of a-IGZO TFTs under visible spectrum is adjusted with control of annealing temperature condition, which is closely related with oxygen vacancy level, validated by X-ray photoelectron spectroscopy (XPS) and band diagrams in the TFTs. With optimized annealing temperature for a-IGZO TFTs, LFCs are successfully demonstrated by photosensitive complementary inverters and their 3-stage ring oscillators with power and wavelength dependency of light. This result is expected to be applicable to the newly conceived internet-of-things (IoT) sensor systems including interactive displays.
引用
收藏
页码：1315 / 1318
页数：4
相关论文
共 24 条
[1]   Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors [J].
Choi, Jun Young ;
Heo, Keun ;
Cho, Kyung-Sang ;
Hwang, Sung Woo ;
Chung, JaeGwan ;
Kim, Sangsig ;
Lee, Byeong Hyeon ;
Lee, Sang Yeol .
SCIENTIFIC REPORTS, 2017, 7
[2]   Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors [J].
Chowdhury, Md Delwar Hossain ;
Migliorato, Piero ;
Jang, Jin .
APPLIED PHYSICS LETTERS, 2010, 97 (17)
[3]   Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].
Fortunato, E. ;
Barquinha, P. ;
Martins, R. .
ADVANCED MATERIALS, 2012, 24 (22) :2945-2986
[4]   Uncooled Carbon Nanotube Photodetectors [J].
He, Xiaowei ;
Leonard, Francois ;
Kono, Junichiro .
ADVANCED OPTICAL MATERIALS, 2015, 3 (08) :989-1011
[5]   Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states [J].
Hsieh, Hsing-Hung ;
Kamiya, Toshio ;
Nomura, Kenji ;
Hosono, Hideo ;
Wu, Chung-Chih .
APPLIED PHYSICS LETTERS, 2008, 92 (13)
[6]   Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination [J].
Huang, Xiaoming ;
Wu, Chenfei ;
Lu, Hai ;
Ren, Fangfang ;
Xu, Qingyu ;
Ou, Huiling ;
Zhang, Rong ;
Zheng, Youdou .
APPLIED PHYSICS LETTERS, 2012, 100 (24)
[7]   The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design [J].
Jang, Jun Tae ;
Choi, Sung-Jin ;
Kim, Dong Myong ;
Kim, Dae Hwan .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (03) :1002-1008
[8]   Study on the Photoresponse of Amorphous In-Ga-Zn-O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap-State Distribution and Device Simulation [J].
Jang, Jun Tae ;
Park, Jozeph ;
Ahn, Byung Du ;
Kim, Dong Myong ;
Choi, Sung-Jin ;
Kim, Hyun-Suk ;
Kim, Dae Hwan .
ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (28) :15570-15577
[9]   Oxygen vacancies in ZnO [J].
Janotti, A ;
Van de Walle, CG .
APPLIED PHYSICS LETTERS, 2005, 87 (12) :1-3
[10]   Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics [J].
Jeon, Kichan ;
Kim, Changjung ;
Song, Ihun ;
Park, Jaechul ;
Kim, Sunil ;
Kim, Sangwook ;
Park, Youngsoo ;
Park, Jun-Hyun ;
Lee, Sangwon ;
Kim, Dong Myong ;
Kim, Dae Hwan .
APPLIED PHYSICS LETTERS, 2008, 93 (18)
123