Effects of additive gases and plasma post-treatment on electrical properties and optical transmittance of ZnO thin films

被引：28
作者：
Bang, Jung-Hwan [1 ]
Uhm, Hyun-Seok [1 ]
Kim, Won [1 ]
Park, Jin-Seok [1 ]
机构：
[1] Hanyang Univ, Dept Elect Elect Control & Instrumentat Engn, Ansan 426791, Gyeonggi Do, South Korea
来源：
THIN SOLID FILMS | 2010年 / 519卷 / 05期
关键词：
Zinc oxide(ZnO); In-situ gas addition; Plasma post-treatment; Resistivity; Transmittance; Crystal quality; HYDROGEN; CONDUCTIVITY; TRANSISTORS; ENERGY;
D O I：
10.1016/j.tsf.2010.08.088
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A zinc oxide (ZnO) thin film as a channel layer in an oxide thin film transistor (TFT) has been characterized by investigating the effects of additive gases (such as hydrogen and oxygen) during growth and plasma treatment (using argon or hydrogen) after growth on its electrical, optical, and structural properties. By decreasing the additive gas ratio of O-2/H-2 or by increasing the treatment time of hydrogen plasma, the electrical resistivities of ZnO films were significantly reduced, and their transmittances and optical bandgap energies were blue-shifted in wavelength. These results were considered to be closely related to the passivation of oxygen vacancies as well as the formation of shallow donors that were induced by the injection of hydrogen in ZnO via gas addition and plasma treatment. In addition, the injection of hydrogen-including additive gas resulted in a decrease in grain size and crystallinity of ZnO films, whereas the plasma treatment hardly affected their crystalline structures. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1568 / 1572
页数：5
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