New 1200V MOSFET structure on SOI with SIPOS shielding layer

被引：56

作者：

Funaki, H ^{[1
]}

Yamaguchi, Y ^{[1
]}

Hirayama, K ^{[1
]}

Nakagawa, A ^{[1
]}

机构：

[1] Toshiba Corp, Adv Semicond Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702621

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have experimentally obtained, for the first time, the 1200V lateral diodes and MOSFETs on SOI. The SOI structure is characterized by a SIPOS layer inserted between the silicon layer and the buried oxide. It was found that the new SOI diode breakdown voltage is determined by the conventional bulk pn junction theory and not by Resurf principle.

引用

页码：25 / 28

页数：4