Effect of Annealing Temperature on the Microstructure and Magnetic Properties of MnGa Films

被引:2
作者
Cheng, Weiming [1 ,2 ]
Jiang, Shize [1 ,2 ]
Xu, Wenchao [1 ,2 ]
Hui, Yajuan [1 ,2 ]
Wang, Haiwei [2 ]
Chen, Jincai [2 ]
Miao, Xiangshui [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
MnGa; Sputtering; Annealing; Magnetic properties; Microstructure;
D O I
10.1007/s10948-016-3506-2
中图分类号
O59 [应用物理学];
学科分类号
摘要
MnGa films are the promising magnetic recording materials and spintronic materials owing to their intrinsic properties, such as large magnetic anisotropy, high coercivity, moderate magnetization, and high spin polarization. In this paper, MnGa films with high coercivity and low surface roughness have been successfully fabricated onto MgO substrates by magnetron sputtering and post-annealing. Moreover, the effects of post-annealing temperature (T (a)) on crystalline structure, surface morphology, and magnetic performances of MnGa films have also been investigated. It is found that the crystallization temperature for MnGa films is 400 C-a similar to. With increasing T (a), the crystallization degree enhances and an in-plane texture is formed. The grain size and surface roughness of MnGa films increase slowly when T (a) is below 500 C-a similar to, but they exhibit a rapid rise when T (a) is above 500 C-a similar to. As T (a) increases, the coercivity (H (c)) and remanence squareness ratio (S) for MnGa films improve monotonically, whereas saturation magnetization (M (s)) increases firstly and then drops. The increases in H (c), S, and M (s) with T (a) are attributed to the grains' growth and the improvement of crystallinity, and the decrease of M (s) at higher T (a) possibly is due to the partial oxidation of Mn.
引用
收藏
页码:2035 / 2039
页数:5
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