Efficient Variability-Aware NBTI and Hot Carrier Circuit Reliability Analysis

被引:30
作者
Maricau, Elie [1 ]
Gielen, Georges [1 ]
机构
[1] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium
关键词
Design of experiments (DoE); hot carrier; negative bias temperature instability (NBTI); reliability simulation; variability-aware simulation; SIMULATION; DEGRADATION; YIELD; MODEL;
D O I
10.1109/TCAD.2010.2062870
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper discusses an efficient method to analyze the spatial and temporal reliability of analog and digital circuits. First, a SPICE-based reliability simulator with automatic step-size control is proposed. Both hot carrier degradation and negative bias temperature instability are included in the simulator. Next, a method to analyze the interaction between process variability effects and circuit aging is introduced. This method is based on a screening experimental design (DoE) succeeded by a set of regression DoEs, resulting in a good speed-accuracy tradeoff with a nearly linear complexity for all circuits under test. Finally, based on the DoE analysis, a circuit response surface model (RSM) is derived. The RSM is used for further circuit reliability analysis such as circuit weak spot detection and yield calculation as a function of circuit lifetime. The proposed method is validated over a broad range of both analog and digital circuits. Yield simulation time is reduced with up to three orders of magnitude, when compared to standard Monte Carlo-based techniques and while still maintaining simulation accuracy.
引用
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页码:1884 / 1893
页数:10
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