Theoretical and experimental investigation of external-stress effect on quantum-well-based semiconductor interferometer performance

被引:3
|
作者
Ueda, Yuta [1 ]
Hashizume, Yasuaki [1 ]
Yamada, Takashi [1 ]
Matsuzaki, Hideaki [2 ]
Ishikawa, Mitsuteru [1 ]
机构
[1] NTT Corp, NTT Device Innovat Ctr, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan
[2] NTT Corp, NTT Device Technol Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan
关键词
Multi-quantum well; External stress; Interferometer; Band structure; MACH-ZEHNDER INTERFEROMETER; OPTICAL-PROPERTIES; PARAMETERS; OPERATION; BANDWIDTH; MODULATOR;
D O I
10.35848/1882-0786/ac17d1
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate characteristic fluctuations in multi-quantum well (MQW)-based waveguides whose absorption spectrum experimentally changes as a similar to 5 nm blue shift when dielectric passivation layers are employed. We theoretically show that the blue shift corresponds to a similar to 0.03% compressive strain in the MQW resulting in a group refractive index change (Delta n ( g )) of similar to-0.01. The estimated Delta n ( g ) agrees with an experimentally obtained free spectral range of transmittance of an asymmetric Mach-Zehnder interferometer composed of the MQW structure. The results indicate that our theoretical estimation is an efficient way to evaluate the MQW-based waveguide performance with an external stress.
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页数:5
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