660-nm GaInP-AlGaInP quantum-well laser diode structures with reduced vertical beam divergence angle

被引：11

作者：

Cho, S ^{[1
]}

Park, Y

Kim, Y

机构：

[1] Samsung Adv Inst Technol, Photon Program Team, Gyeonggi Do 449712, South Korea

[2] Samsung Electromech, Cent R&D Inst, Opt Semicond Div, Gyeonggi Do 443743, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 03期

关键词：

laser beams; quantum-well (QW) lasers; semiconductor lasers;

D O I：

10.1109/LPT.2004.842324

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a new layer design for 660-nm GaInP-Al-GaInP quantum-well laser diodes employing a two-step n-cladding layer and demonstrate the feasibility of achieving a reduced vertical beam divergence angle of as low as 14.8degrees with a relatively small decrease in the optical confinement factor by theoretical simulations and experimental observations.

引用

页码：534 / 536

页数：3

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