Micromachining technology for lateral field emission devices

被引：26
作者：
Milanovic, V [1 ]
Doherty, L
Teasdale, DA
Parsa, S
Pister, KSJ
机构：
[1] La Jolla Microsyst Inst, San Diego, CA 92110 USA
[2] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, UC Berkeley Microfabricat Lab, Berkeley, CA 94720 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 01期
关键词：
deep reactive ion etch; field emission device; MEMS; micromachining; vacuum microelectronics; vacuum tubes;
D O I：
10.1109/16.892185
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a range of novel applications of micromachining and microelectromechanical systems (MEMS) for achieving efficient and tunable field emission devices (FEDs), Arrays of lateral field emission tips are fabricated with submicron spacing utilizing deep reactive ion etch (DRIE), Current densities above 150 A/cm(2) are achieved with over 150 . 10(6) tips/cm(2). With sacrificial sidewall spacing, electrodes can be placed at arbitrarily close distances to reduce turn-on voltages. F-Ve further utilize MEMS actuators to laterally adjust electrode distances. To improve the integration capability of FEDs, we demonstrate batch hump-transfer of working lateral FEDs onto a quartz target substrate.
引用
收藏
页码：166 / 173
页数：8
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