Carrier-induced refractive index changes in InP-based circular microresonators for low-voltage high-speed modulation

被引：24

作者：

Sadagopan, T ^{[1
]}

Choi, SJ

Djordjev, K

Dapkus, PD

机构：

[1] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA

[3] Univ So Calif, Dept Mat Sci, Los Angeles, CA 90089 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 02期

关键词：

high speed; ion bombardment; low voltage; microresonators; modulators; tunable filters; wavelength-division multiplexing;

D O I：

10.1109/LPT.2004.839773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical InP-based microresonator modulators which achieve low-voltage high-bandwidth modulation are presented, where resonant wavelength tuning of a circular resonator by free carrier injection is used as the modulation mechanism., Since thermal effects in small resonant cavities and switching speed limitations posed by minority carrier lifetime are the primary concerns in such types of devices, ion bombardment in microtoroidal structures is used to increase the speed of response. the modulation speed is enhanced by an order of magnitude.

引用

页码：414 / 416

页数：3

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