Patterning Superconductivity in a Topological Insulator

被引：7

作者：

Mlack, Jerome T. ^{[1
,2
]}

Rahman, Atikur ^{[1
]}

Danda, Gopinath ^{[2
,3
]}

Drichko, Natalia ^{[1
]}

Friedensen, Sarah ^{[2
]}

Drndic, Marija ^{[2
]}

Markovic, Nina ^{[1
,4
]}

机构：

[1] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA

[2] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

[3] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA

[4] Goucher Coll, Dept Phys & Astron, Baltimore, MD 21204 USA

来源：

ACS NANO | 2017年 / 11卷 / 06期

基金：

美国国家科学基金会;

关键词：

topological insulators; patterning superconductivity; electron transport; transmission electron microscopy; Raman spectroscopy; MAJORANA FERMIONS; SURFACE; TRANSPORT;

D O I：

10.1021/acsnano.7b01549

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Topologically protected states in combination with superconductivity hold great promise for quantum computing applications, but the progress on electrical transport measurements in such systems has been impeded by the difficulty of fabricating devices with reliable electrical contacts. We find that superconductivity can be patterned directly into Bi2Se3 nanostructures by local doping with palladium. Superconducting regions are defined by depositing palladium on top of the nanostructures using electron beam lithography followed by in situ annealing. Electrical transport measurements at low temperatures show either partial or full superconducting transition, depending on the doping conditions. Structural characterization techniques indicate that palladium remains localized in the targeted areas, making it possible to pattern superconducting circuits of arbitrary shapes in this topological material.

引用

页码：5873 / 5878

页数：6

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