AlAs/GaAs micropillar cavities with quality factors exceeding 150.000

被引：273

作者：

Reitzenstein, S. ^{[1
]}

Hofmann, C. ^{[1
]}

Gorbunov, A. ^{[1
]}

Gorbunov, M. ^{[1
]}

Strauss, M. ^{[1
]}

Kwon, S. H. ^{[1
]}

Schneider, C. ^{[1
]}

Loeffler, A. ^{[1
]}

Hoefling, S. ^{[1
]}

Kamp, M. ^{[1
]}

Forchel, A. ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 25期

关键词：

D O I：

10.1063/1.2749862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on AlAs/ GaAs micropillar cavities with unprecedented quality factors based on high reflectivity distributed Bragg reflectors (DBRs). Due to an increased number of mirror pairs in the DBRs and an optimized etching process record quality (Q) factors up to 165.000 are observed for micropillars with diameters of 4 mu m. Optical studies reveal a very small ellipticity of 5 X 10(-4) of the pillar cross section. Because of the high Q factors, strong coupling with a vacuum Rabi splitting of 23 mu eV is observed for micropillars with a diameter of 3 mu m. (c) 2007 American Institute of Physics.

引用

页数：3

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