Influence of different precursor surface layers on Cu(In1-xGax)Se2 thin film solar cells

被引：24
作者：
Liu, W.
Sun, Y.
Li, W.
Li, C.-J.
Li, F.-Y.
Tian, J.-G. [1 ]
机构：
[1] Nankai Univ, MOE Key Lab Adv Tech & Fabricat Weak Light Nonlin, Tianjin 300457, Peoples R China
[2] Nankai Univ, Tianjin Key Lab Photon Mat & Technol Informat Sci, Tianjin 300457, Peoples R China
[3] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 88卷 / 04期
关键词：
D O I：
10.1007/s00339-007-4021-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The properties of Cu(In1-xGax)Se-2 (CIGS) thin films obtained by selenization of the precursors with different surface layers have been studied, and photovoltaic devices based on the absorbers were measured and analyzed. The devices constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layers are improved, compared with those with In-rich surface layers. Through XRD, SEM, SIMS, illuminated J-V, QE and Raman spectra measurements, it was found that the increased Ga contents within the surface region of films and the graded Ga distribution can be realized in the selenized thin films fabricated by the precursors with the CuGa-rich surface layer. Consequently, the performances of the photovoltaic devices based on these thin films are further improved.
引用
收藏
页码：653 / 656
页数：4
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