30 Gb/s over 100-m MMFs using 1.1-μm range VCSELs and photodiodes

被引：6

作者：

Fukatsu, Kimiyoshi ^{[1
]}

Shiba, Kazuhiro ^{[1
]}

Suzuki, Yasuyuki ^{[2
]}

Suzuki, Naofumi ^{[1
]}

Anan, Takayoshi ^{[1
]}

Hatakeyama, Hiroshi ^{[1
]}

Yashiki, Kenichiro ^{[1
]}

Tsuji, Masayoshi ^{[1
]}

机构：

[1] NEC Corp Ltd, Nano Elect Res Labs, Shiga 5200833, Japan

[2] NEC Corp Ltd, Device Platforms Res Labs, Kanagawa 2118666, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 9-12期

关键词：

heterojunction bipolar transistors (HBTs); optical interconnections; photodiodes (PD's); semiconductor lasers;

D O I：

10.1109/LPT.2008.922357

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed 1.1-mu m-range vertical-cavity surface-emitting lasers based on InGaAs-GaAs quantum wells, back-illuminated InGaAs photodiodes, and transimpedance amplifiers (InP heterojunction bipolar transistor) for high-speed optical interconnection. Clear eye opening operation and error-free transmission at 30 Gb/s over 100-m multimode fibers (GI32) were successfully achieved for the first time.

引用

页码：909 / 911

页数：3

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