Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides

被引：26

作者：

Esqueda, Ivan S. ^{[1
]}

Barnaby, Hugh J. ^{[1
]}

Adell, Philippe C. ^{[2
]}

Rax, Bernard G. ^{[2
]}

Hjalmarson, Harold P. ^{[3
]}

McLain, Michael L. ^{[3
]}

Pease, Ronald L. ^{[4
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

[4] RLP Res, Los Lunas, NM 87031 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

Bipolar; CMOS; dose rate; enhanced low dose rate sensitivity (ELDRS); interface traps; shallow trench isolation (STI); silicon dioxide; total ionizing dose (TID); RATE SENSITIVITY ELDRS; BIPOLAR-TRANSISTORS; INTERFACE STATES; PHYSICAL MODEL; MOS DEVICES; RADIATION; HYDROGEN; IRRADIATION; MECHANISMS;

D O I：

10.1109/TNS.2011.2168569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations.

引用

页码：2945 / 2952

页数：8

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